All MOSFET. SD214DE Datasheet

 

SD214DE MOSFET. Datasheet pdf. Equivalent

Type Designator: SD214DE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 40 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 45 Ohm

Package: TO-72

SD214DE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SD214DE Datasheet (PDF)

1.1. sd210de sd212de sd214de.pdf Size:29K _upd-mosfet

SD214DE
SD214DE

High-Speed Analog N-Channel DMOS FETs SD210 / SD212 / SD214 FEATURES DESCRIPTION • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a • • Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with • • Low Feedthrough and Feedba

5.1. 2sd2144s.pdf Size:53K _update

SD214DE
SD214DE

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Units : mm) Features 2SD2114K 1) High DC current gain. 2.9±0.2 1.1+0.2 1.9±0.2 -0.1 hFE = 1200 (Typ.) 0.8±0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0∼0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) VCE (sat) = 0.18V (Typ.) +0.1 0.15

5.2. sd210 sd212 sd214.pdf Size:88K _upd-mosfet

SD214DE
SD214DE



 5.3. 2sd2142.pdf Size:48K _rohm

SD214DE
SD214DE

2SD2142K / 2SC2062S Transistors Transistors 2SD2470 (94L-570-D25) (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for refere

5.4. 2sd2143.pdf Size:157K _rohm

SD214DE
SD214DE

Medium Power Transistor (Motor, Relay drive) (60?10V, 2A) 2SD2143 ?Features ? Dimensions (Unit : mm) 1) Built-in zener diode between collector and base. 5.5 1.5 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9 C0.5 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit 0.8Mi

 5.5. 2sd2142k.pdf Size:77K _rohm

SD214DE
SD214DE

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3 (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.1 2) High input impedance. 0.4 0.8 (3) Inner circuit (2) (1) C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector E

5.6. 2sd2142.pdf Size:329K _secos

SD214DE
SD214DE

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. A L High input impedance. 3 3 Top View C B MARKING 1 1 2 2 K E R1M D H J F G PACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. REF.

5.7. 2sd2141.pdf Size:23K _sanken-ele

SD214DE

Equivalent circuit C Built-in Avalanche Diode B for Surge Absorbing Darlington 2SD2141 (1.5k?)(100?) E Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SD2141 Symbol Conditions 2SD2141 Unit Unit 0.2

5.8. 2sd2148.pdf Size:36K _inchange_semiconductor

SD214DE
SD214DE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2148 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ High speed switching power supply output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Ў¤ Absolute maximum

5.9. 2sd2140.pdf Size:261K _inchange_semiconductor

SD214DE
SD214DE

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PAR

5.10. 2sd2142.pdf Size:424K _htsemi

SD214DE

2S 2142 D TRANSISOR (NPN) SOT–23 FEATURES ? Darlington Connection for a High hFE ? High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBO I Collector Current 300 mA C P Collect

5.11. 2sd2142.pdf Size:910K _kexin

SD214DE
SD214DE

SMD Type Transistors NPN Transistors 2SD2142 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=300mA 1 2 ● Collector Emitter Voltage VCEO=32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

Datasheet: SD202DC , SD203DC , SD210 , SD2100 , SD210DE , SD212 , SD212DE , SD214 , IRF9540 , SD217DE , SD219DE , SD403BD , SD403CY , SD5000N , SD5001N , SD5002N , SD5400CY .

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