SD219DE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SD219DE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 22.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.16 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-72

Búsqueda de reemplazo de MOSFET SD219DE

SD219DE Datasheet (PDF)

..1. Size:106K calogic
sd217de sd219de.pdf

9.1. Size:141K sanyo
2sd2198.pdf

Ordering number:EN3149PNP/NPN Epitaxial Planar Silicon Transistors2SB1449/2SD219850V/5A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1449/2SD2198]cesses for 2SB1449/2SD2198-applied equipment.-High density surface mount applications.-Small size of

9.2. Size:104K sanyo
2sd2199.pdf

Ordering number:EN3150PNP/NPN Epitaxial Planar Silicon Transistors2SB1450/2SD219950V/7A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1450/2SD2199]cesses for 2SB1450/2SD2199-applied equipment.-High density surface mount applications.-Small size of

9.3. Size:66K rohm
2sd2195 2sd1980 2sd1867 2sd2398.pdf

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

9.4. Size:67K rohm
2sd1867 2sd2195.pdf

9.5. Size:902K kexin
2sd2195.pdf

SMD Type TransistorsNPN Transistors2SD2195SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100VC Complementary to 2SB15800.42 0.10.46 0.1BR1 R2 1.BaseER1 3.5k2.CollectorR2 3003.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100

9.6. Size:204K inchange semiconductor
2sd2196.pdf

isc Silicon NPN Darlington Power Transistor 2SD2196DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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