SD219DE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SD219DE
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 22.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.16 A
Tjⓘ - Максимальная температура канала: 125 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-72
SD219DE Datasheet (PDF)
2sd2198.pdf
Ordering number:EN3149PNP/NPN Epitaxial Planar Silicon Transistors2SB1449/2SD219850V/5A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1449/2SD2198]cesses for 2SB1449/2SD2198-applied equipment.-High density surface mount applications.-Small size of
2sd2199.pdf
Ordering number:EN3150PNP/NPN Epitaxial Planar Silicon Transistors2SB1450/2SD219950V/7A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1450/2SD2199]cesses for 2SB1450/2SD2199-applied equipment.-High density surface mount applications.-Small size of
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd1867 2sd2195.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd2195.pdf
SMD Type TransistorsNPN Transistors2SD2195SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100VC Complementary to 2SB15800.42 0.10.46 0.1BR1 R2 1.BaseER1 3.5k2.CollectorR2 3003.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100
2sd2196.pdf
isc Silicon NPN Darlington Power Transistor 2SD2196DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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