SF1116 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SF1116
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 110 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de SF1116 MOSFET
SF1116 Datasheet (PDF)
sf1116.pdf

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliabi
ssf1116a.pdf

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf1116.pdf

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param
Otros transistores... SEFN9140 , SEFY140C , SEFY340CSTX , SEFY9130C , SES744 , SES759 , SES760 , SES779 , P60NF06 , SFF044J , SFF054 , SFF054C , SH8J62 , SH8J65 , SH8K11 , SH8K12 , SH8K13 .
History: 2SJ410 | AOND62930



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