SF1116 Datasheet and Replacement
Type Designator: SF1116
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220
SF1116 substitution
SF1116 Datasheet (PDF)
sf1116.pdf

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliabi
ssf1116a.pdf

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf1116.pdf

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param
Datasheet: SEFN9140 , SEFY140C , SEFY340CSTX , SEFY9130C , SES744 , SES759 , SES760 , SES779 , RU6888R , SFF044J , SFF054 , SFF054C , SH8J62 , SH8J65 , SH8K11 , SH8K12 , SH8K13 .
History: 2SK1859 | 7NM70G-TM3-T | SST4117 | MTP1406J3 | HGN028NE6A | NCE6602N | BSC011N03LST
Keywords - SF1116 MOSFET datasheet
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History: 2SK1859 | 7NM70G-TM3-T | SST4117 | MTP1406J3 | HGN028NE6A | NCE6602N | BSC011N03LST



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