All MOSFET. SF1116 Datasheet

 

SF1116 Datasheet and Replacement


   Type Designator: SF1116
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220
 

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SF1116 Datasheet (PDF)

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SF1116

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliabi

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SF1116

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

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SF1116

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

Datasheet: SEFN9140 , SEFY140C , SEFY340CSTX , SEFY9130C , SES744 , SES759 , SES760 , SES779 , RU6888R , SFF044J , SFF054 , SFF054C , SH8J62 , SH8J65 , SH8K11 , SH8K12 , SH8K13 .

History: 2SK1859 | 7NM70G-TM3-T | SST4117 | MTP1406J3 | HGN028NE6A | NCE6602N | BSC011N03LST

Keywords - SF1116 MOSFET datasheet

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