SF1116 Specs and Replacement
Type Designator: SF1116
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220
SF1116 substitution
- MOSFET ⓘ Cross-Reference Search
SF1116 datasheet
sf1116.pdf
SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliabi... See More ⇒
ssf1116a.pdf
SSF1116A Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par... See More ⇒
ssf1116.pdf
SSF1116 Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param... See More ⇒
Detailed specifications: SEFN9140, SEFY140C, SEFY340CSTX, SEFY9130C, SES744, SES759, SES760, SES779, AO3400A, SFF044J, SFF054, SFF054C, SH8J62, SH8J65, SH8K11, SH8K12, SH8K13
Keywords - SF1116 MOSFET specs
SF1116 cross reference
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