IRL1004 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1004  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 210 nS

Cossⓘ - Capacitancia de salida: 1480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO220

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IRL1004 datasheet

 ..1. Size:89K  international rectifier
 irl1004.pdf pdf_icon

IRL1004

PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065 175 C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques

 ..2. Size:159K  international rectifier
 irl1004pbf.pdf pdf_icon

IRL1004

PD - 95403 IRL1004PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.0065 l Fast Switching G l Fully Avalanche Rated ID = 130A l Lead-Free S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

 ..3. Size:245K  inchange semiconductor
 irl1004.pdf pdf_icon

IRL1004

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL1004 IIRL1004 FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 0.1. Size:210K  international rectifier
 irl1004lpbf irl1004spbf.pdf pdf_icon

IRL1004

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0065 l Fully Avalanche Rated G l Lead-Free ID = 130A Description S Fifth Generation HEXFET power MOSFETs from International Rectifier u

MOSTRAR MÁS

Otros transistores... IRFZ44NS, IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL, IRFZ48NS, 50N06, IRL1004L, IRL1004S, IRL2203N, IRL2203NL, IRL2203NS, IRL2505, IRL2505L, IRL2505S