IRL1004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL1004
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) VQgⓘ - Carga de la puerta: 100(max) nC
trⓘ - Tiempo de subida: 210 nS
Cossⓘ - Capacitancia de salida: 1480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
IRL1004 Datasheet (PDF)
irl1004.pdf
PD - 91702BIRL1004HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065 175C Operating TemperatureG Fast SwitchingID = 130A Fully Avalanche RatedSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing techniques
irl1004pbf.pdf
PD - 95403IRL1004PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 40Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.0065l Fast Switching Gl Fully Avalanche RatedID = 130Al Lead-FreeSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced
irl1004.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL1004IIRL1004FEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
irl1004lpbf irl1004spbf.pdf
PD - 95575IRL1004SPbFIRL1004LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0065l Fully Avalanche RatedGl Lead-FreeID = 130ADescriptionSFifth Generation HEXFET power MOSFETs fromInternational Rectifier u
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF740FI
History: IRF740FI
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