All MOSFET. IRL1004 Datasheet

 

IRL1004 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL1004

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO220AB

IRL1004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL1004 Datasheet (PDF)

1.1. irl1004pbf.pdf Size:159K _upd

IRL1004
IRL1004

PD - 95403 IRL1004PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.0065Ω l Fast Switching G l Fully Avalanche Rated ID = 130A… l Lead-Free S Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced

1.2. irl1004lpbf irl1004spbf.pdf Size:210K _upd

IRL1004
IRL1004

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.0065Ω l Fully Avalanche Rated G l Lead-Free ID = 130A… Description S Fifth Generation HEXFET® power MOSFETs from International Rectifier u

 1.3. irl1004.pdf Size:89K _international_rectifier

IRL1004
IRL1004

PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065? 175C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achie

1.4. irl1004s.pdf Size:123K _international_rectifier

IRL1004
IRL1004

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.0065? G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniqu

Datasheet: IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRF540N , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S .

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