IRL1004 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL1004
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 4.5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO220AB
IRL1004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL1004 PDF doc:
1.1. irl1004.pdf 
Size:89K _international_rectifier
PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065? 175°C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achie
1.2. irl1004s.pdf Size:123K _international_rectifier
PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.0065? G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniqu
Datasheet: IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRF540N , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S .
