IRL1004S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1004S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 210 nS

Cossⓘ - Capacitancia de salida: 1480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO263

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IRL1004S datasheet

 ..1. Size:210K  international rectifier
 irl1004lpbf irl1004spbf.pdf pdf_icon

IRL1004S

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0065 l Fully Avalanche Rated G l Lead-Free ID = 130A Description S Fifth Generation HEXFET power MOSFETs from International Rectifier u

 ..2. Size:123K  international rectifier
 irl1004s irl1004l.pdf pdf_icon

IRL1004S

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.0065 G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing

 ..3. Size:252K  inchange semiconductor
 irl1004s.pdf pdf_icon

IRL1004S

isc N-Channel MOSFET Transistor IRL1004S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 7.1. Size:89K  international rectifier
 irl1004.pdf pdf_icon

IRL1004S

PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065 175 C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques

MOSTRAR MÁS

Otros transistores... IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL, IRFZ48NS, IRL1004, IRL1004L, IRFP460, IRL2203N, IRL2203NL, IRL2203NS, IRL2505, IRL2505L, IRL2505S, IRL2703, IRL2703S