IRL2203N Datasheet. Equivalente

 ..1. Size:186K  international rectifier
 irl2203npbf.pdf

PD - 94953 IRL2203NPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 30V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 7.0m G l Fast Switching l Fully Avalanche Rated ID = 116A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

 ..2. Size:221K  international rectifier
 irl2203n.pdf

PD - 91366 IRL2203N HEXFET Power MOSFET Advanced Process Technology D VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 7.0m G Fast Switching Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

 ..3. Size:246K  inchange semiconductor
 irl2203n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2203N IIRL2203N FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 0.1. Size:290K  international rectifier
 irl2203nlpbf irl2203nspbf.pdf

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 0.2. Size:290K  international rectifier
 irl2203nspbf irl2203nlpbf.pdf

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 0.3. Size:132K  international rectifier
 irl2203ns irl2203nl.pdf

PD - 94394 IRL2203NS IRL2203NL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 7.0m Fast Switching G Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 0.4. Size:211K  international rectifier
 auirl2203n.pdf

AUTOMOTIVE GRADE AUIRL2203N Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Low On-Resistance 30V l Logic Level Gate Drive l Dynamic dV/dT Rating RDS(on) max. 7m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 116A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 75A l Lead-Free, RoHS C

 0.5. Size:270K  inchange semiconductor
 irl2203ns.pdf

isc N-Channel MOSFET Transistor IRL2203NS DESCRIPTION Static drain-source on-resistance RDS(on) 7m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS