All MOSFET. IRL2203N Datasheet

 

IRL2203N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL2203N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 116 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60(max) nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 1270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

 IRL2203N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL2203N Datasheet (PDF)

 ..1. Size:186K  international rectifier
irl2203npbf.pdf

IRL2203N IRL2203N

PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 ..2. Size:221K  international rectifier
irl2203n.pdf

IRL2203N IRL2203N

PD - 91366IRL2203NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0mG Fast Switching Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resist

 ..3. Size:186K  infineon
irl2203npbf.pdf

IRL2203N IRL2203N

PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 ..4. Size:246K  inchange semiconductor
irl2203n.pdf

IRL2203N IRL2203N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2203NIIRL2203NFEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:290K  international rectifier
irl2203nlpbf irl2203nspbf.pdf

IRL2203N IRL2203N

PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 0.2. Size:132K  international rectifier
irl2203ns irl2203nl.pdf

IRL2203N IRL2203N

PD - 94394IRL2203NSIRL2203NLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0m Fast SwitchingG Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely lo

 0.3. Size:211K  international rectifier
auirl2203n.pdf

IRL2203N IRL2203N

AUTOMOTIVE GRADEAUIRL2203NFeatures HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSSl Low On-Resistance 30Vl Logic Level Gate Drivel Dynamic dV/dT RatingRDS(on) max.7ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited) 116Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS C

 0.4. Size:290K  infineon
irl2203nspbf irl2203nlpbf.pdf

IRL2203N IRL2203N

PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 0.5. Size:270K  inchange semiconductor
irl2203ns.pdf

IRL2203N IRL2203N

isc N-Channel MOSFET Transistor IRL2203NSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 7m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRF1404 , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S , IRL2703 , IRL2703S , IRL2910 .

 

 
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