SHD219501 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD219501 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 348 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 180 nS
Cossⓘ - Capacitancia de salida: 2000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: LCC-3P
📄📄 Copiar
Búsqueda de reemplazo de SHD219501 MOSFET
- Selecciónⓘ de transistores por parámetros
SHD219501 datasheet
shd219501.pdf
SENSITRON SHD219501 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS (on) Equivalent to IRFN054 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS
shd219504.pdf
SHD219504 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 607, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES 400 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS (on) Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 14 Amps ON-STATE DRAI
shd219503.pdf
SENSITRON SHD219503 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 896, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION A 200 VOLT, .100 OHM MOSFET IN A HERMETIC CERAMIC LCC-3P PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 27.4 Amps CONTINUOUS DRAIN CURRENT @ TC =
shd219511.pdf
SENSITRON SHD219511 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 608, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES 400 Volt, 0.24 Ohm, 16A MOSFET Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 16 Amps ON-STATE DRAIN CURRENT @ TC = 25 C IDM - - 64 A
Otros transistores... SHD219303, SHD219401, SHD219402, SHD219403, SHD219405, SHD219409, SHD219410, SHD219451, IRFB4115, SHD219503, SHD219504, SHD219511, SHD219601, SHD219603, SHD219701, SHD219720, SHD220212
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2n404 | 2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor
