SHD224701 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD224701
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 Vtrⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 740 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO-258
Búsqueda de reemplazo de MOSFET SHD224701
SHD224701 Datasheet (PDF)
shd224701.pdf
SHD224701 SENSITRON SHDCG224701 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4151, REV. B LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 100 Volt, 0.011 Ohm, 90A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Ceramic Seals with Glidcop leads (SHDCG224701) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIF
shd224622.pdf
SENSITRON SHD224622SEMICONDUCTORTECHNICAL DATADATA SHEET 4197, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 200 Volt, 80A, 36 milliohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Low package inductance-easy to drive and protect Add suffix S for S-100 screening MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPECIFIED.CRATING S
shd224605 shd224606.pdf
SHD224605SENSITRON SHD224606SEMICONDUCTORTECHNICAL DATADATA SHEET 812, REV. -HERMETIC POWER MOSFETN-CHANNEL(Standard and Fast-FET)DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-258 PACKAGE.SHD224605: Formerly SHD2243, N-Channel Enhancement Mode.SHD224606: Formerly SHD2243F, N-Channel Enhancement Mode with Fast Intrinsic Diode.MAXIMUM RATINGS (AT Tj
shd224805.pdf
SENSITRON SHD224805 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5159, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 60A, 55 milli-Ohm Isolated Hermetic Metal Package Very low Gate Charge Very Low RDS (on) Low package inductance-easy to drive and protect MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMB
shd224802.pdf
SHD224802 SENSITRON SHDCG224802 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: 600 Volt, 0.07 Ohm, 47A MOSFET Isolated Hermetic Metal Package Low RDS (on); Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings Ceramic Seals with Glidcop leads (SHDCG224802) MAXIMUM RATINGS ALL RATINGS AR
shd224502.pdf
SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM150 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOU
shd224514.pdf
SENSITRON SHD224514SEMICONDUCTORTECHNICAL DATADATA SHEET 1172, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXFD80N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC
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Liste
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