SHD224701
MOSFET. Datasheet pdf. Equivalent
Type Designator: SHD224701
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 210
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 740
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO-258
SHD224701
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SHD224701
Datasheet (PDF)
..1. Size:139K sensitron
shd224701.pdf
SHD224701 SENSITRON SHDCG224701 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4151, REV. B LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 100 Volt, 0.011 Ohm, 90A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Ceramic Seals with Glidcop leads (SHDCG224701) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIF
8.1. Size:60K sensitron
shd224622.pdf
SENSITRON SHD224622SEMICONDUCTORTECHNICAL DATADATA SHEET 4197, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 200 Volt, 80A, 36 milliohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Low package inductance-easy to drive and protect Add suffix S for S-100 screening MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPECIFIED.CRATING S
8.2. Size:60K sensitron
shd224605 shd224606.pdf
SHD224605SENSITRON SHD224606SEMICONDUCTORTECHNICAL DATADATA SHEET 812, REV. -HERMETIC POWER MOSFETN-CHANNEL(Standard and Fast-FET)DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-258 PACKAGE.SHD224605: Formerly SHD2243, N-Channel Enhancement Mode.SHD224606: Formerly SHD2243F, N-Channel Enhancement Mode with Fast Intrinsic Diode.MAXIMUM RATINGS (AT Tj
8.3. Size:33K sensitron
shd224805.pdf
SENSITRON SHD224805 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5159, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 60A, 55 milli-Ohm Isolated Hermetic Metal Package Very low Gate Charge Very Low RDS (on) Low package inductance-easy to drive and protect MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMB
8.4. Size:50K sensitron
shd224802.pdf
SHD224802 SENSITRON SHDCG224802 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: 600 Volt, 0.07 Ohm, 47A MOSFET Isolated Hermetic Metal Package Low RDS (on); Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings Ceramic Seals with Glidcop leads (SHDCG224802) MAXIMUM RATINGS ALL RATINGS AR
8.5. Size:50K sensitron
shd224502.pdf
SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM150 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOU
8.6. Size:60K sensitron
shd224514.pdf
SENSITRON SHD224514SEMICONDUCTORTECHNICAL DATADATA SHEET 1172, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXFD80N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC
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