IRL2703 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

PD - 9.1359AIRL2703HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistanc

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2703 IIRL2703FEATURESStatic drain-source on-resistance:RDS(on) 0.04Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

PD- 95586IRL2703SPbF Lead-Freewww.irf.com 107/20/04IRL2703SPbF2 www.irf.comIRL2703SPbFwww.irf.com 3IRL2703SPbF4 www.irf.comIRL2703SPbFwww.irf.com 5IRL2703SPbF6 www.irf.comIRL2703SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

PD - 9.1360IRL2703SPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible