IRL2703 Todos los transistores

PD - 95368 IRL2703PbF Lead-Free www.irf.com 1 6/17/04 IRL2703PbF 2 www.irf.com IRL2703PbF www.irf.com 3 IRL2703PbF 4 www.irf.com IRL2703PbF www.irf.com 5 IRL2703PbF 6 www.irf.com IRL2703PbF www.irf.com 7 IRL2703PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

PD - 9.1359A IRL2703 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.04 Fast Switching G Fully Avalanche Rated ID = 24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2703 IIRL2703 FEATURES Static drain-source on-resistance RDS(on) 0.04 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

PD- 95586 IRL2703SPbF Lead-Free www.irf.com 1 07/20/04 IRL2703SPbF 2 www.irf.com IRL2703SPbF www.irf.com 3 IRL2703SPbF 4 www.irf.com IRL2703SPbF www.irf.com 5 IRL2703SPbF 6 www.irf.com IRL2703SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.04 Fast Switching G Fully Avalanche Rated ID = 24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible