IRL2910S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL2910S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 200 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 140(max) nC
Tiempo de subida (tr): 100 nS
Conductancia de drenaje-sustrato (Cd): 630 pF
Resistencia entre drenaje y fuente RDS(on): 0.026 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET IRL2910S
IRL2910S Datasheet (PDF)
irl2910spbf irl2910lpbf.pdf
PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
irl2910s irl2910l.pdf
PD - 91376BIRL2910S/LHEXFET Power MOSFET Logic-Level Gate DriveD Surface MountVDSS = 100V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.026 Dynamic dv/dt RatingG Fast Switching Fully Avalanche RatedID = 55ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-
irl2910spbf irl2910lpbf.pdf
PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
irl2910s.pdf
Isc N-Channel MOSFET Transistor IRL2910SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irl2910n.pdf
PD 9.1375IRL2910PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 100VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.026175C Operating TemperatureFast SwitchingID = 48AFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely l
irl2910pbf.pdf
PD - 94993IRL2910PbF Lead-Freewww.irf.com 12/10/04IRL2910PbF2 www.irf.comIRL2910PbFwww.irf.com 3IRL2910PbF4 www.irf.comIRL2910PbFwww.irf.com 5IRL2910PbF6 www.irf.comIRL2910PbFwww.irf.com 7IRL2910PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irl2910.pdf
PD - 91375BIRL2910HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 175C Operating TemperatureG Fast SwitchingID = 55A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextrem
irl2910pbf.pdf
PD - 94993IRL2910PbF Lead-Freewww.irf.com 12/10/04IRL2910PbF2 www.irf.comIRL2910PbFwww.irf.com 3IRL2910PbF4 www.irf.comIRL2910PbFwww.irf.com 5IRL2910PbF6 www.irf.comIRL2910PbFwww.irf.com 7IRL2910PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irl2910pbf.pdf
IRL2910PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE
irl2910l.pdf
Isc N-Channel MOSFET Transistor IRL2910LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irl2910.pdf
isc N-Channel MOSFET Transistor IRL2910IIRL2910FEATURESStatic drain-source on-resistance:RDS(on) 0.026Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
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