IRF7379QPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7379QPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SO-8

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IRF7379QPBF datasheet

 ..1. Size:245K  international rectifier
 irf7379qpbf.pdf pdf_icon

IRF7379QPBF

PD - 96111 IRF7379QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 P-CHANNEL MOSFET l Automotive [Q101] Qualified RDS(on) 0.045 0.090 l Lead-Free To

 6.1. Size:349K  1
 auirf7379q.pdf pdf_icon

IRF7379QPBF

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

 6.2. Size:349K  infineon
 auirf7379q.pdf pdf_icon

IRF7379QPBF

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

 7.1. Size:215K  international rectifier
 irf7379.pdf pdf_icon

IRF7379QPBF

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

MOSTRAR MÁS

Otros transistores... SHD619532, SHD626532, SHDC220212, SHDC220213, SHDC220301, IRF7353D1PBF, IRF7353D2PBF, IRF7379IPBF, IRF9540, IRF737LCPBF, IRF7380PBF-1, IRF7380QPBF, IRF7389PBF-1, IRF7401PBF, IRF7401PBF-1, IRF7402PBF, IRF7403PBF