IRF7379QPBF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7379QPBF
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.8
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 25
nC
trⓘ -
Время нарастания: 21
ns
Cossⓘ - Выходная емкость: 180
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045
Ohm
Тип корпуса:
SO-8
Аналог (замена) для IRF7379QPBF
IRF7379QPBF
Datasheet (PDF)
..1. Size:245K international rectifier
irf7379qpbf.pdf 
PD - 96111IRF7379QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 45G2 D2P-CHANNEL MOSFETl Automotive [Q101] QualifiedRDS(on) 0.045 0.090l Lead-FreeTo
6.1. Size:349K 1
auirf7379q.pdf 
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
6.2. Size:349K infineon
auirf7379q.pdf 
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
7.1. Size:215K international rectifier
irf7379.pdf 
PD - 91625IRF7379HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D12 7 Complimentary Half BridgeG1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced p
7.2. Size:201K international rectifier
irf7379ipbf.pdf 
PD - 96089IRF7379IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifie
7.3. Size:219K infineon
irf7379pbf.pdf 
PD - 95300IRF7379PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifier
7.4. Size:1949K cn vbsemi
irf7379tr.pdf 
IRF7379TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
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