IRF7379QPBF - описание и поиск аналогов

PD - 96111 IRF7379QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 P-CHANNEL MOSFET l Automotive [Q101] Qualified RDS(on) 0.045 0.090 l Lead-Free To

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

PD - 95300 IRF7379PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier

PD - 96089 IRF7379IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifie

IRF7379TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG