IRF737LCPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95947IRF737LCPbF Lead-Free12/20/04Document Number: 91050 www.vishay.com1IRF737LCPbFDocument Number: 91050 www.vishay.com2IRF737LCPbFDocument Number: 91050 www.vishay.com3IRF737LCPbFDocument Number: 91050 www.vishay.com4IRF737LCPbFDocument Number: 91050 www.vishay.com5IRF737LCPbFDocument Number: 91050 www.vishay.com6IRF737LCPbFDocument Nu

IRF737LC, SiHF737LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Reduced Gate Drive RequirementVDS (V) 300 Enhanced 30 V VGS RatingAvailableRDS(on) ()VGS = 10 V 0.75 Reduced Ciss, Coss, CrssRoHS*Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency OperationQgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free AvailableQgd (nC) 7.6Con

PD - 9.1314PRELIMINARY IRF737LCHEXFET Power MOSFETReduced Gate Drive RequirementEnhanced 30V VGS RatingVDSS = 300VReduced CISS, COSS, CRSSExtremely High Frequency OperationRDS(on) = 0.75Repetitive Avalanche RatedDescription ID = 6.1AThis new series of Low Charge HEXFETs achievesignificantly lower gate charge over conventional MOSFETs.Utilizing the new LCDMOS techn

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in

PD - 96111IRF7379QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 45G2 D2P-CHANNEL MOSFETl Automotive [Q101] QualifiedRDS(on) 0.045 0.090l Lead-FreeTo

PD - 91625IRF7379HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D12 7 Complimentary Half BridgeG1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced p

PD - 95300IRF7379PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifier

PD - 96089IRF7379IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifie

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in

IRF7379TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG