IRF737LCPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF737LCPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO-220

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IRF737LCPBF datasheet

 ..1. Size:248K  international rectifier
irf737lcpbf.pdf pdf_icon

IRF737LCPBF

PD - 95947 IRF737LCPbF Lead-Free 12/20/04 Document Number 91050 www.vishay.com 1 IRF737LCPbF Document Number 91050 www.vishay.com 2 IRF737LCPbF Document Number 91050 www.vishay.com 3 IRF737LCPbF Document Number 91050 www.vishay.com 4 IRF737LCPbF Document Number 91050 www.vishay.com 5 IRF737LCPbF Document Number 91050 www.vishay.com 6 IRF737LCPbF Document Nu

 ..2. Size:113K  vishay
irf737lcpbf.pdf pdf_icon

IRF737LCPBF

IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Reduced Gate Drive Requirement VDS (V) 300 Enhanced 30 V VGS Rating Available RDS(on) ( )VGS = 10 V 0.75 Reduced Ciss, Coss, Crss RoHS* Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency Operation Qgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free Available Qgd (nC) 7.6 Con

 6.1. Size:145K  international rectifier
irf737lc.pdf pdf_icon

IRF737LCPBF

PD - 9.1314 PRELIMINARY IRF737LC HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating VDSS = 300V Reduced CISS, COSS, CRSS Extremely High Frequency Operation RDS(on) = 0.75 Repetitive Avalanche Rated Description ID = 6.1A This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS techn

 8.1. Size:349K  1
auirf7379q.pdf pdf_icon

IRF737LCPBF

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

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