IRF737LCPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF737LCPBF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO-220
📄📄 Copiar
Búsqueda de reemplazo de IRF737LCPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRF737LCPBF datasheet
irf737lcpbf.pdf
PD - 95947 IRF737LCPbF Lead-Free 12/20/04 Document Number 91050 www.vishay.com 1 IRF737LCPbF Document Number 91050 www.vishay.com 2 IRF737LCPbF Document Number 91050 www.vishay.com 3 IRF737LCPbF Document Number 91050 www.vishay.com 4 IRF737LCPbF Document Number 91050 www.vishay.com 5 IRF737LCPbF Document Number 91050 www.vishay.com 6 IRF737LCPbF Document Nu
irf737lcpbf.pdf
IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Reduced Gate Drive Requirement VDS (V) 300 Enhanced 30 V VGS Rating Available RDS(on) ( )VGS = 10 V 0.75 Reduced Ciss, Coss, Crss RoHS* Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency Operation Qgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free Available Qgd (nC) 7.6 Con
irf737lc.pdf
PD - 9.1314 PRELIMINARY IRF737LC HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating VDSS = 300V Reduced CISS, COSS, CRSS Extremely High Frequency Operation RDS(on) = 0.75 Repetitive Avalanche Rated Description ID = 6.1A This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS techn
auirf7379q.pdf
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in
Otros transistores... SHD626532, SHDC220212, SHDC220213, SHDC220301, IRF7353D1PBF, IRF7353D2PBF, IRF7379IPBF, IRF7379QPBF, AON7408, IRF7380PBF-1, IRF7380QPBF, IRF7389PBF-1, IRF7401PBF, IRF7401PBF-1, IRF7402PBF, IRF7403PBF, SHDC220455
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2sc1312 | bf495 transistor equivalent | 2sc1313 | 2sb560 replacement | 2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786
