IRF737LCPBF datasheet, подбор замены

 ..1. Size:248K  international rectifier
 irf737lcpbf.pdf 

PD - 95947 IRF737LCPbF Lead-Free 12/20/04 Document Number 91050 www.vishay.com 1 IRF737LCPbF Document Number 91050 www.vishay.com 2 IRF737LCPbF Document Number 91050 www.vishay.com 3 IRF737LCPbF Document Number 91050 www.vishay.com 4 IRF737LCPbF Document Number 91050 www.vishay.com 5 IRF737LCPbF Document Number 91050 www.vishay.com 6 IRF737LCPbF Document Nu

 ..2. Size:113K  vishay
 irf737lcpbf.pdf 

IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Reduced Gate Drive Requirement VDS (V) 300 Enhanced 30 V VGS Rating Available RDS(on) ( )VGS = 10 V 0.75 Reduced Ciss, Coss, Crss RoHS* Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency Operation Qgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free Available Qgd (nC) 7.6 Con

 6.1. Size:145K  international rectifier
 irf737lc.pdf 

PD - 9.1314 PRELIMINARY IRF737LC HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating VDSS = 300V Reduced CISS, COSS, CRSS Extremely High Frequency Operation RDS(on) = 0.75 Repetitive Avalanche Rated Description ID = 6.1A This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS techn

 8.1. Size:349K  1
 auirf7379q.pdf 

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

 8.2. Size:245K  international rectifier
 irf7379qpbf.pdf 

PD - 96111 IRF7379QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 P-CHANNEL MOSFET l Automotive [Q101] Qualified RDS(on) 0.045 0.090 l Lead-Free To

 8.3. Size:215K  international rectifier
 irf7379.pdf 

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

 8.4. Size:219K  international rectifier
 irf7379pbf.pdf 

PD - 95300 IRF7379PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier

 8.5. Size:201K  international rectifier
 irf7379ipbf.pdf 

PD - 96089 IRF7379IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifie

 8.6. Size:349K  infineon
 auirf7379q.pdf 

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

 8.7. Size:1949K  cn vbsemi
 irf7379tr.pdf 

IRF7379TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG