SIA413ADJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIA413ADJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: SC-70-6L
Búsqueda de reemplazo de MOSFET SIA413ADJ
SIA413ADJ Datasheet (PDF)
sia413adj.pdf
New ProductSiA413ADJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material cat
sia413dj.pdf
SiA413DJVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material categorization:0.1
sia418dj.pdf
SiA418DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:1230 5 nCFor definitions of compliance please see0.022 at VGS = 4.5 V 12www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS DC/DC
sia414dj.pdf
SiA414DJVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAKVDS (V) RDS(on) ()ID (A)a Qg (Typ.)SC-70 Package0.011 at VGS = 4.5 V 12- Small Footprint Area Material categorization:0.013 at VGS = 2.5 V 12For definitions of compliance please see0.016 at VGS = 1.8 V 8 12 19 nC
sia417dj.pdf
New ProductSiA417DJVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.031 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package0.040 at VGS = - 1.8 V - 8 - Small Footprint Area- 12a 19 nC- Low On-Res
sia415dj.pdf
New ProductSiA415DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.035 at VGS = - 4.5 V - 12a- 20 15 nC New Thermally Enhanced PowerPAK RoHS0.051 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONSPowerPAK
sia411dj.pdf
New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-
sia416dj.pdf
SiA416DJVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.083 at VGS = 10 V 11.3100 3.5 nCFor definitions of compliance please see0.130 at VGS = 4.5 V 9www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS
sia419dj.pdf
SiA419DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.030 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET0.039 at VGS = - 2.5 V - 12a New Thermally Enhanced PowerPAKSC-70 Package- 20 0.051 at VGS = - 1.8 V - 12a 17.5 nC- Small Footprint Area
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