SIA413ADJ Datasheet. Specs and Replacement
Type Designator: SIA413ADJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SC-70-6L
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SIA413ADJ substitution
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SIA413ADJ datasheet
sia413adj.pdf
New Product SiA413ADJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material cat... See More ⇒
sia413dj.pdf
SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material categorization 0.1... See More ⇒
sia418dj.pdf
SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 30 5 nC For definitions of compliance please see 0.022 at VGS = 4.5 V 12 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS DC/DC... See More ⇒
sia414dj.pdf
SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SC-70 Package 0.011 at VGS = 4.5 V 12 - Small Footprint Area Material categorization 0.013 at VGS = 2.5 V 12 For definitions of compliance please see 0.016 at VGS = 1.8 V 8 12 19 nC ... See More ⇒
Detailed specifications: SHDC225456, SHDC225509, SHDCG225715, SHDG225509, SIA400EDJ, SIA406DJ, SIA408DJ, SIA411DJ, IRFB3607, SIA413DJ, SIA414DJ, SIA415DJ, SIA416DJ, SIA417DJ, SIA418DJ, SIA419DJ, SIA421DJ
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MOSFET Parameters. How They Affect Each Other
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