SIA413DJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIA413DJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SC-70-6L

Búsqueda de reemplazo de MOSFET SIA413DJ

SIA413DJ Datasheet (PDF)

..1. Size:211K vishay
sia413dj.pdf

SiA413DJVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material categorization:0.1

8.1. Size:215K vishay
sia413adj.pdf

New ProductSiA413ADJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material cat

9.1. Size:193K vishay
sia418dj.pdf

SiA418DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:1230 5 nCFor definitions of compliance please see0.022 at VGS = 4.5 V 12www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS DC/DC

9.2. Size:203K vishay
sia414dj.pdf

SiA414DJVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAKVDS (V) RDS(on) ()ID (A)a Qg (Typ.)SC-70 Package0.011 at VGS = 4.5 V 12- Small Footprint Area Material categorization:0.013 at VGS = 2.5 V 12For definitions of compliance please see0.016 at VGS = 1.8 V 8 12 19 nC

9.3. Size:93K vishay
sia417dj.pdf

New ProductSiA417DJVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.031 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package0.040 at VGS = - 1.8 V - 8 - Small Footprint Area- 12a 19 nC- Low On-Res

9.4. Size:188K vishay
sia415dj.pdf

New ProductSiA415DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.035 at VGS = - 4.5 V - 12a- 20 15 nC New Thermally Enhanced PowerPAK RoHS0.051 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONSPowerPAK

9.5. Size:189K vishay
sia411dj.pdf

New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-

9.6. Size:210K vishay
sia416dj.pdf

SiA416DJVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.083 at VGS = 10 V 11.3100 3.5 nCFor definitions of compliance please see0.130 at VGS = 4.5 V 9www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS

9.7. Size:92K vishay
sia419dj.pdf

SiA419DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.030 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET0.039 at VGS = - 2.5 V - 12a New Thermally Enhanced PowerPAKSC-70 Package- 20 0.051 at VGS = - 1.8 V - 12a 17.5 nC- Small Footprint Area

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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