SIA413DJ Datasheet. Specs and Replacement

Type Designator: SIA413DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SC-70-6L

  📄📄 Copy 

SIA413DJ substitution

- MOSFET ⓘ Cross-Reference Search

 

SIA413DJ datasheet

 ..1. Size:211K  vishay
sia413dj.pdf pdf_icon

SIA413DJ

SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material categorization 0.1... See More ⇒

 8.1. Size:215K  vishay
sia413adj.pdf pdf_icon

SIA413DJ

New Product SiA413ADJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material cat... See More ⇒

 9.1. Size:193K  vishay
sia418dj.pdf pdf_icon

SIA413DJ

SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 30 5 nC For definitions of compliance please see 0.022 at VGS = 4.5 V 12 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS DC/DC... See More ⇒

 9.2. Size:203K  vishay
sia414dj.pdf pdf_icon

SIA413DJ

SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SC-70 Package 0.011 at VGS = 4.5 V 12 - Small Footprint Area Material categorization 0.013 at VGS = 2.5 V 12 For definitions of compliance please see 0.016 at VGS = 1.8 V 8 12 19 nC ... See More ⇒

Detailed specifications: SHDC225509, SHDCG225715, SHDG225509, SIA400EDJ, SIA406DJ, SIA408DJ, SIA411DJ, SIA413ADJ, AON7506, SIA414DJ, SIA415DJ, SIA416DJ, SIA417DJ, SIA418DJ, SIA419DJ, SIA421DJ, SIA425EDJ

Keywords - SIA413DJ MOSFET specs

 SIA413DJ cross reference

 SIA413DJ equivalent finder

 SIA413DJ pdf lookup

 SIA413DJ substitution

 SIA413DJ replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.