SIA418DJ Datasheet. Equivalente

 ..1. Size:193K  vishay
 sia418dj.pdf

SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 30 5 nC For definitions of compliance please see 0.022 at VGS = 4.5 V 12 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS DC/DC

 9.1. Size:211K  vishay
 sia413dj.pdf

SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material categorization 0.1

 9.2. Size:203K  vishay
 sia414dj.pdf

SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SC-70 Package 0.011 at VGS = 4.5 V 12 - Small Footprint Area Material categorization 0.013 at VGS = 2.5 V 12 For definitions of compliance please see 0.016 at VGS = 1.8 V 8 12 19 nC

 9.3. Size:93K  vishay
 sia417dj.pdf

New Product SiA417DJ Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS 0.031 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package 0.040 at VGS = - 1.8 V - 8 - Small Footprint Area - 12a 19 nC - Low On-Res

 9.4. Size:188K  vishay
 sia415dj.pdf

New Product SiA415DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ) TrenchFET Power MOSFET 0.035 at VGS = - 4.5 V - 12a - 20 15 nC New Thermally Enhanced PowerPAK RoHS 0.051 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS PowerPAK

 9.5. Size:215K  vishay
 sia413adj.pdf

New Product SiA413ADJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material cat

 9.6. Size:189K  vishay
 sia411dj.pdf

New Product SiA411DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS 0.041 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package - 20 15 nC 0.056 at VGS = - 1.8 V - Small Footprint Area - 12a - Low On-

 9.7. Size:210K  vishay
 sia416dj.pdf

SiA416DJ Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.083 at VGS = 10 V 11.3 100 3.5 nC For definitions of compliance please see 0.130 at VGS = 4.5 V 9 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS

 9.8. Size:92K  vishay
 sia419dj.pdf

SiA419DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.030 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET 0.039 at VGS = - 2.5 V - 12a New Thermally Enhanced PowerPAK SC-70 Package - 20 0.051 at VGS = - 1.8 V - 12a 17.5 nC - Small Footprint Area