SIA426DJ Datasheet. Equivalente

 ..1. Size:217K  vishay
 sia426dj.pdf

New Product SiA426DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAK RoHS 0.0263 at VGS = 4.5 V 20 4.5 7.9 nC COMPLIANT SC-70 Package 0.0361 at VGS = 2.5 V - Small Footprint Area 4.5 - Low On-Resistanc

 9.1. Size:200K  vishay
 sia421dj.pdf

SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.035 at VGS = - 10 V - 12a - 30 10 nC - Small Footprint Area 0.056 at VGS = - 4.5 V - 12a - Low On-Resistance Material categorization For definitions of compliance please

 9.2. Size:222K  vishay
 sia427adj.pdf

New Product SiA427ADJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.016 at VGS = - 4.5 V - 12a - Small Footprint Area 0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested - 8 0.026 at VGS = - 1.8 V - 12a 30 nC

 9.3. Size:200K  vishay
 sia429djt.pdf

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S

 9.4. Size:109K  vishay
 sia425edj.pdf

SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.065 at VGS = - 3.6 V - 4.5a - 20 4.9 nC SC-70 Package 0.080 at VGS = - 2.5 V - 4.5a - Small Footpri

 9.5. Size:154K  vishay
 sia429dj.pdf

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S

 9.6. Size:222K  vishay
 sia427dj.pdf

New Product SiA427DJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.016 at VGS = - 4.5 V - 12a - Small Footprint Area 0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance - 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate