Справочник MOSFET. SIA426DJ

 

SIA426DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIA426DJ
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 3.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 4.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 17.5 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 160 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0236 Ohm
   Тип корпуса: SC-70-6L

 Аналог (замена) для SIA426DJ

 

 

SIA426DJ Datasheet (PDF)

 ..1. Size:217K  vishay
 sia426dj.pdf

SIA426DJ SIA426DJ

New ProductSiA426DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS0.0263 at VGS = 4.5 V 20 4.5 7.9 nCCOMPLIANTSC-70 Package0.0361 at VGS = 2.5 V - Small Footprint Area4.5- Low On-Resistanc

 9.1. Size:200K  vishay
 sia421dj.pdf

SIA426DJ SIA426DJ

SiA421DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.035 at VGS = - 10 V - 12a- 30 10 nC- Small Footprint Area0.056 at VGS = - 4.5 V - 12a- Low On-Resistance Material categorization:For definitions of compliance please

 9.2. Size:222K  vishay
 sia427adj.pdf

SIA426DJ SIA426DJ

New ProductSiA427ADJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested- 8 0.026 at VGS = - 1.8 V - 12a 30 nC

 9.3. Size:200K  vishay
 sia429djt.pdf

SIA426DJ SIA426DJ

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

 9.4. Size:109K  vishay
 sia425edj.pdf

SIA426DJ SIA426DJ

SiA425EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.065 at VGS = - 3.6 V - 4.5a- 20 4.9 nCSC-70 Package0.080 at VGS = - 2.5 V - 4.5a- Small Footpri

 9.5. Size:154K  vishay
 sia429dj.pdf

SIA426DJ SIA426DJ

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

 9.6. Size:222K  vishay
 sia427dj.pdf

SIA426DJ SIA426DJ

New ProductSiA427DJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a- Low On-Resistance- 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top