SIA519EDJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIA519EDJ
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.9 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
   Carga de la puerta (Qg): 7.7 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 82 pF
   Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
   Paquete / Cubierta: SC-70-6

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SIA519EDJ Datasheet (PDF)

..1. Size:270K vishay
sia519edj.pdf

New ProductSiA519EDJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETsN-Channel 20 3.7 nC0.065 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 2000 V0.090 at VGS = - 4.5 V - 4.5a P-C

6.1. Size:270K vishay
sia519ed.pdf

8.1. Size:434K shenzhen
sia519.pdf

Shenzhen Tuofeng Semiconductor Technology Co., LtdSiA519N- and P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)0.040 at VGS = 4.5 V 4.2N-Channel 20 3.7 nC0.065 at VGS = 2.5 V 3.30.090 at VGS = - 4.5 V - 2.9P-Channel - 20 5.3 nC0.137 at VGS = - 2.5 V - 2.3D1 S21S12G13D1D2G1D1G2D26G252.05 mm2.05 mm S2

9.1. Size:266K vishay
sia517dj.pdf

New ProductSiA517DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.029 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC New Thermally Enhanced PowerPAK 0.044 at VGS = 1.8 V 4.5aSC-70 Packag

9.2. Size:227K vishay
sia513dj.pdf

New ProductSiA513DJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.060 at VGS = 4.5 V 4.5aN-Channel 20 3.5 nC New Thermally Enhanced PowerPAK RoHS0.092 at VGS = 2.5 V 4.5aCOMPLIANTSC-70 Package0.110 at VGS = - 4.5 V - 4.5a- Small Footprint

9.3. Size:133K vishay
sia511dj.pdf

New ProductSiA511DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.040 at VGS = 4.5 V 4.5a New Thermally Enhanced PowerPAK RoHSN-Channel 12 0.048 at VGS = 2.5 V 4.5a 4.5 nCCOMPLIANTSC-70 Package0.063 at VGS = 1.8 V 4.5a - Small Footprint Area

9.4. Size:3543K kexin
sia517dj.pdf

SMD Type MOSFETComplementary Trench MOSFETSIA517DJ (KIA517DJ)DFN2X2-6L FeaturesN-Channel VDS (V) = 12V ID = 4.5 A (VGS = 4.5V)1S1 RDS(ON) 29m (VGS = 4.5V)2G1 RDS(ON) 34m (VGS = 2.5V)3D1D2 RDS(ON) 44m (VGS = 1.8V)D1D26 RDS(ON) 65m (VGS = 1.5V) G252.05 mm2.05 mm S2P-Channel4 VDS (V) = -12V

9.5. Size:3458K cn tuofeng
sia517.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN- and P-Channel 12-V (D-S) MOSFETSiA517N- and P-Channel 12-V (D-S) MOSFETDFN2X2-6LPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)1S10.029 at VGS = 4.5 V 4.5a2G10.034 at VGS = 2.5 V 4.5a3D1N-Channel 12 5.6 nCD20.044 at VGS = 1.8 V 4.5aD1 D260.065 at VGS = 1.5 V 4.5aG252.05 mm0.061 at V

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