SIA519EDJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIA519EDJ
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 1.9 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.4 V
Максимально допустимый постоянный ток стока |Id|: 4.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7.7 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 82 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
Тип корпуса: SC-70-6
SIA519EDJ Datasheet (PDF)
sia519edj.pdf
New ProductSiA519EDJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETsN-Channel 20 3.7 nC0.065 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 2000 V0.090 at VGS = - 4.5 V - 4.5a P-C
sia519ed.pdf
New ProductSiA519EDJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETsN-Channel 20 3.7 nC0.065 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 2000 V0.090 at VGS = - 4.5 V - 4.5a P-C
sia519.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdSiA519N- and P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)0.040 at VGS = 4.5 V 4.2N-Channel 20 3.7 nC0.065 at VGS = 2.5 V 3.30.090 at VGS = - 4.5 V - 2.9P-Channel - 20 5.3 nC0.137 at VGS = - 2.5 V - 2.3D1 S21S12G13D1D2G1D1G2D26G252.05 mm2.05 mm S2
sia517dj.pdf
New ProductSiA517DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.029 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC New Thermally Enhanced PowerPAK 0.044 at VGS = 1.8 V 4.5aSC-70 Packag
sia513dj.pdf
New ProductSiA513DJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.060 at VGS = 4.5 V 4.5aN-Channel 20 3.5 nC New Thermally Enhanced PowerPAK RoHS0.092 at VGS = 2.5 V 4.5aCOMPLIANTSC-70 Package0.110 at VGS = - 4.5 V - 4.5a- Small Footprint
sia511dj.pdf
New ProductSiA511DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.040 at VGS = 4.5 V 4.5a New Thermally Enhanced PowerPAK RoHSN-Channel 12 0.048 at VGS = 2.5 V 4.5a 4.5 nCCOMPLIANTSC-70 Package0.063 at VGS = 1.8 V 4.5a - Small Footprint Area
sia517dj.pdf
SMD Type MOSFETComplementary Trench MOSFETSIA517DJ (KIA517DJ)DFN2X2-6L FeaturesN-Channel VDS (V) = 12V ID = 4.5 A (VGS = 4.5V)1S1 RDS(ON) 29m (VGS = 4.5V)2G1 RDS(ON) 34m (VGS = 2.5V)3D1D2 RDS(ON) 44m (VGS = 1.8V)D1D26 RDS(ON) 65m (VGS = 1.5V) G252.05 mm2.05 mm S2P-Channel4 VDS (V) = -12V
sia517.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN- and P-Channel 12-V (D-S) MOSFETSiA517N- and P-Channel 12-V (D-S) MOSFETDFN2X2-6LPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)1S10.029 at VGS = 4.5 V 4.5a2G10.034 at VGS = 2.5 V 4.5a3D1N-Channel 12 5.6 nCD20.044 at VGS = 1.8 V 4.5aD1 D260.065 at VGS = 1.5 V 4.5aG252.05 mm0.061 at V
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C