SIA810DJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIA810DJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.6 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 7 nC
Tiempo de subida (tr): 32 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 0.053 Ohm
Paquete / Cubierta: SC-70-6
Búsqueda de reemplazo de MOSFET SIA810DJ
SIA810DJ Datasheet (PDF)
sia810dj.pdf
New ProductSiA810DJVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHS20 0.063 at VGS = 2.5 V 4.5 4.1 nCCOMPLIANTSC-70 Package0.077 at VGS = 1.8 V 4.5- Sma
sia817edj.pdf
New ProductSiA817EDJVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Schottky Power MOSFETQg Thermally Enhanced PowerPAKVDS (V) RDS(on) () Max. ID (A)(Typ.)SC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 4.5 V - 4.5a- Low On-Resistance- 300.092 at VGS = - 3.7
sia811dj.pdf
New ProductSiA811DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.094 at VGS = - 4.5 V - 4.5RoHS New Thermally Enhanced PowerPAKCOMPLIANT- 20 0.131 at VGS = - 2.5 V 4.9 nC- 4.5SC-70 Package0.185 at VGS = - 1.8 V - 4.5
sia811.pdf
New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5
sia813dj.pdf
New ProductSiA813DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg ID (A)aDefinition0.094 at VGS = - 4.5 V - 4.5 LITTLE FOOT Plus Schottky Power MOSFET- 20 0.131 at VGS = - 2.5 V - 4.5 4.9 nC New Thermally Enhanced PowerPAK0.185 at VGS = - 1.8 V -
sia814dj.pdf
New ProductSiA814DJVishay SiliconixN-Channel 30-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.061 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS30 0.072 at VGS = 4.5 V 4.5 3.2 nCCOMPLIANTSC-70 Package0.110 at VGS = 2.5 V 4.5- Smal
sia811adj.pdf
New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5
Otros transistores... SIA462DJ , SIA466EDJ , SIA483DJ , SIA485DJ , SIA519EDJ , SIA527DJ , SIA533EDJ , SIA537EDJ , MDF11N65B , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ , SIA850DJ , SIA906EDJ , SIA907EDJT .
