SIA813DJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIA813DJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2.3 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 8 V
   Corriente continua de drenaje |Id|: 3.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 8.5 nC
   Tiempo de subida (tr): 35 nS
   Conductancia de drenaje-sustrato (Cd): 75 pF
   Resistencia entre drenaje y fuente RDS(on): 0.094 Ohm
   Paquete / Cubierta: SC-70-6

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SIA813DJ Datasheet (PDF)

..1. Size:309K vishay
sia813dj.pdf

New ProductSiA813DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg ID (A)aDefinition0.094 at VGS = - 4.5 V - 4.5 LITTLE FOOT Plus Schottky Power MOSFET- 20 0.131 at VGS = - 2.5 V - 4.5 4.9 nC New Thermally Enhanced PowerPAK0.185 at VGS = - 1.8 V -

9.1. Size:213K vishay
sia810dj.pdf

New ProductSiA810DJVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHS20 0.063 at VGS = 2.5 V 4.5 4.1 nCCOMPLIANTSC-70 Package0.077 at VGS = 1.8 V 4.5- Sma

9.2. Size:319K vishay
sia817edj.pdf

New ProductSiA817EDJVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Schottky Power MOSFETQg Thermally Enhanced PowerPAKVDS (V) RDS(on) () Max. ID (A)(Typ.)SC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 4.5 V - 4.5a- Low On-Resistance- 300.092 at VGS = - 3.7

9.3. Size:213K vishay
sia811dj.pdf

New ProductSiA811DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.094 at VGS = - 4.5 V - 4.5RoHS New Thermally Enhanced PowerPAKCOMPLIANT- 20 0.131 at VGS = - 2.5 V 4.9 nC- 4.5SC-70 Package0.185 at VGS = - 1.8 V - 4.5

9.4. Size:208K vishay
sia811.pdf

New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5

9.5. Size:241K vishay
sia814dj.pdf

New ProductSiA814DJVishay SiliconixN-Channel 30-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.061 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS30 0.072 at VGS = 4.5 V 4.5 3.2 nCCOMPLIANTSC-70 Package0.110 at VGS = 2.5 V 4.5- Smal

9.6. Size:209K vishay
sia811adj.pdf

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