SIA921EDJ Datasheet. Equivalente

 ..1. Size:187K  vishay
 sia921edj.pdf

SiA921EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 0.059 at VGS = - 4.5 V Package - 4.5a - 20 4.9 nC - Small Footprint Area 0.098 at VGS = - 2.5 V - 4.5a - Low On-Resistance Typical ESD Protection 1700 V PowerPAK SC-70-6 Dual

 6.1. Size:212K  vishay
 sia921ed.pdf

SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.059 at VGS = - 4.5 V - 4.5a - 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5a Package - Small Footprint Area - Low On-Resistance

 9.1. Size:277K  vishay
 sia922edj.pdf

SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.064 at VGS = 4.5 V 4.5a - Small footprint area - Low on-resistance 0.072 at VGS = 3.0 V 4.5a 30 3.5 nC Typical ESD protection 1500 V (HBM) 0.080 at

 9.2. Size:209K  vishay
 sia923edj.pdf

SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5a Package - 20 9.5 nC 0.104 at VGS = - 1.8 V - 4.5a - Small Fo

 9.3. Size:228K  vishay
 sia929dj.pdf

New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Gen III Power MOSFET 0.064 at VGS = - 10 V - 4.5a Thermally Enhanced PowerPAK 0.078 at VGS = - 4.5 V - 30 - 4.5a 6.6 nC SC-70 Package 0.120 at VGS = - 2.5

 9.4. Size:223K  vishay
 sia920dj.pdf

New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.027 at VGS = 4.5 V 4.5 Thermally Enhanced PowerPAK 0.031 at VGS = 2.5 V 4.5 SC-70 Package 8 0.036 at Vgs = 1.8 V 4.5 4.8 nC - Small Footprint Area 0.

 9.5. Size:353K  vishay
 sia923aedj.pdf

SiA923AEDJ www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally Enhanced PowerPAK SC-70 Package 0.054 at VGS = -4.5 V -4.5 a - Small Footprint Area 0.070 at VGS = -2.5 V -4.5 a - Low On-Resistance -20 9.5 nC 0.104 at VGS = -1.8 V -4.5 a Typical ESD Prot