SIHA12N50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHA12N50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-220FP

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SIHA12N50E Datasheet (PDF)

..1. Size:164K vishay
siha12n50e.pdf

SiHA12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

7.1. Size:171K vishay
siha12n60e.pdf

SiHA12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 58 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 13 M

9.1. Size:141K vishay
siha11n80e.pdf

SiHA11N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?99912

9.2. Size:170K vishay
siha15n60e.pdf

SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17

9.3. Size:164K vishay
siha15n50e.pdf

SiHA15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

9.4. Size:200K inchange semiconductor
siha11n80e.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SiHA11N80EFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

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