All MOSFET. SIHA12N50E Datasheet

 

SIHA12N50E Datasheet and Replacement


   Type Designator: SIHA12N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220FP
 

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SIHA12N50E Datasheet (PDF)

 ..1. Size:164K  vishay
 siha12n50e.pdf pdf_icon

SIHA12N50E

SiHA12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

 7.1. Size:171K  vishay
 siha12n60e.pdf pdf_icon

SIHA12N50E

SiHA12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 58 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 13 M

 9.1. Size:141K  vishay
 siha11n80e.pdf pdf_icon

SIHA12N50E

SiHA11N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?99912

 9.2. Size:170K  vishay
 siha15n60e.pdf pdf_icon

SIHA12N50E

SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17

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Datasheet: SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , SIE876DF , SIE878DF , SIE882DF , SKD502T , SIHA12N60E , SIHA15N50E , SIHA15N60E , SIHA20N50E , SIHA22N60E , SIHA25N50E , SIHB10N40D , SIHB12N50C .

History: NVMTS0D6N04C

Keywords - SIHA12N50E MOSFET datasheet

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