SIHB22N60S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHB22N60S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 1480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-263

 Búsqueda de reemplazo de SIHB22N60S MOSFET

- Selecciónⓘ de transistores por parámetros

 

SIHB22N60S datasheet

 ..1. Size:148K  vishay
 sihb22n60s.pdf pdf_icon

SIHB22N60S

SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS at TJ max. (V) 650 Halogen-free According to IEC 61249-2-21 RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Definition Qg max. (nC) 98 High EAR Capability Qgs (nC) 17 Lower Figure-of-Merit Ron x Qg Qgd (nC) 25 100 % Avalanche Tested Configuration Single

 5.1. Size:198K  vishay
 sihb22n60e.pdf pdf_icon

SIHB22N60S

SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced Switching and Conduction Losses Qg max. (nC) 86 Ultra Low Gate Charge (Qg) Qgs (nC) 14 Avalanche Energy Rated (UIS) Qgd (nC) 26

 5.2. Size:257K  inchange semiconductor
 sihb22n60e.pdf pdf_icon

SIHB22N60S

isc N-Channel MOSFET Transistor SiHB22N60E FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 6.1. Size:209K  vishay
 sihb22n65e.pdf pdf_icon

SIHB22N60S

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 32

MOSTRAR MÁS

Otros transistores... SIHB12N60E, SIHB12N65E, SIHB15N50E, SIHB15N60E, SIHB15N65E, SIHB16N50C, SIHB20N50E, SIHB22N60E, IRFZ48N, SIHB22N65E, SIHB23N60E, SIHB24N65E, SIHB28N60EF, SIHB30N60E, SIHB33N60E, SIHB33N60EF, SIHB6N65E