SIHB22N60S Datasheet and Replacement. Cross Reference Search

SIHB22N60S Datasheet (PDF)

..1. Size:148K vishay
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SiHB22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 Halogen-free According to IEC 61249-2-21RDS(on) max. at 25 C () VGS = 10 V 0.190DefinitionQg max. (nC) 98 High EAR CapabilityQgs (nC) 17 Lower Figure-of-Merit Ron x QgQgd (nC) 25 100 % Avalanche TestedConfiguration Single

5.1. Size:198K vishay
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SiHB22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

5.2. Size:257K inchange semiconductor
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isc N-Channel MOSFET Transistor SiHB22N60EFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

6.1. Size:209K vishay
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SiHB22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Qgd (nC) 32

Datasheet: SIHB12N60E , SIHB12N65E , SIHB15N50E , SIHB15N60E , SIHB15N65E , SIHB16N50C , SIHB20N50E , SIHB22N60E , RU7088R , SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF , SIHB30N60E , SIHB33N60E , SIHB33N60EF , SIHB6N65E .