SIHF12N60E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF12N60E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 53 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-220FP

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SIHF12N60E datasheet

 ..1. Size:168K  vishay
 sihf12n60e.pdf pdf_icon

SIHF12N60E

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced Switching and Conduction Losses Qg max. (nC) 58 Ultra Low Gate Charge (Qg) Qgs (nC) 6 Avalanche Energy Rated (UIS) Qgd (nC) 13

 6.1. Size:134K  vishay
 sihf12n65e.pdf pdf_icon

SIHF12N60E

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M

 7.1. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHF12N60E

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

 7.2. Size:179K  vishay
 sihb12n50c sihf12n50c sihp12n50c.pdf pdf_icon

SIHF12N60E

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

MOSTRAR MÁS

Otros transistores... SIHD3N50D, SIHD3N50DA, SIHD5N50D, SIHD6N62E, SIHD6N65E, SIHD7N60E, SIHF10N40D, SIHF12N50C, IRF740, SIHF12N65E, SIHF15N60E, SIHF15N65E, SIHF16N50C, SIHF18N50C, SIHF18N50D, SIHF22N60E, SIHF22N60S