SIHF12N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHF12N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 53 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO-220FP
SIHF12N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHF12N60E Datasheet (PDF)
1.1. sihf12n60e.pdf 
Size:168K _upd-mosfet
SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •
2.1. sihf12n65e.pdf Size:134K _upd-mosfet
SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M
3.1. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet
SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK
3.2. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay
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