SIHF16N50C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF16N50C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 38 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 156 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: TO-220FP

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SIHF16N50C Datasheet (PDF)

1.1. sihb16n50c sihf16n50c.pdf Size:175K _upd-mosfet

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ()VGS = 10 V 0.38 • 100 % Avalanche Tested Qg (Max.) (nC) 68 • Gate Charge Improved Qgs (nC) 17.6 • Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220A

5.1. sihf12n65e.pdf Size:134K _upd-mosfet

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

5.2. sihf18n50c.pdf Size:168K _upd-mosfet

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) (Ω)VGS = 10 V 0.225 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 • Improved trr/Qrr Configuration Single • Improved Gate Charge D • High Power Dissipati

5.3. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

5.4. sihf15n60e.pdf Size:136K _upd-mosfet

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

5.5. sihf15n65e.pdf Size:160K _upd-mosfet

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

5.6. sihf10n40d.pdf Size:168K _upd-mosfet

SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7 •

5.7. sihf12n60e.pdf Size:168K _upd-mosfet

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

5.8. sihf18n50d.pdf Size:169K _upd-mosfet

SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)

5.9. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay