SIHF16N50C PDF and Equivalents Search

 

SIHF16N50C Specs and Replacement

Type Designator: SIHF16N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 156 nS

Cossⓘ - Output Capacitance: 230 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220FP

SIHF16N50C substitution

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SIHF16N50C datasheet

 ..1. Size:292K  vishay
sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

SIHF16N50C

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒

 ..2. Size:175K  vishay
sihb16n50c sihf16n50c sihp16n50c.pdf pdf_icon

SIHF16N50C

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒

 9.1. Size:160K  vishay
sihf15n65e.pdf pdf_icon

SIHF16N50C

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U... See More ⇒

 9.2. Size:134K  vishay
sihf12n65e.pdf pdf_icon

SIHF16N50C

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M... See More ⇒

Detailed specifications: SIHD6N65E , SIHD7N60E , SIHF10N40D , SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E , IRF540 , SIHF18N50C , SIHF18N50D , SIHF22N60E , SIHF22N60S , IRF7404PBF-1 , IRF7404QPBF , IRF7404PBF , IRF7406GPBF .

History: IRF540ZP

Keywords - SIHF16N50C MOSFET specs

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