IRF7406PBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7406PBF-1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SO-8

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IRF7406PBF-1 datasheet

 ..1. Size:231K  international rectifier
 irf7406pbf-1.pdf pdf_icon

IRF7406PBF-1

IRF7406TRPbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

 4.1. Size:235K  international rectifier
 irf7406pbf.pdf pdf_icon

IRF7406PBF-1

PD - 95302 IRF7406PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 7.1. Size:262K  international rectifier
 irf7406gpbf.pdf pdf_icon

IRF7406PBF-1

PD -96259 IRF7406GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

 7.2. Size:114K  international rectifier
 irf7406.pdf pdf_icon

IRF7406PBF-1

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045 Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

MOSTRAR MÁS

Otros transistores... SIHF18N50D, SIHF22N60E, SIHF22N60S, IRF7404PBF-1, IRF7404QPBF, IRF7404PBF, IRF7406GPBF, IRF7406PBF, AO3400, IRF740ALPBF, IRF740APBF, IRF740ASPBF, IRF740B, IRF740LC, IRF740LCPBF, IRF740PBF, IRF740SPBF