IRF7406PBF-1 - аналоги, параметры транзистора

IRF7406PBF-1 даташит

..1. Size:231K international rectifier
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IRF7406TRPbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

4.1. Size:235K international rectifier
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PD - 95302 IRF7406PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

7.1. Size:262K international rectifier
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PD -96259 IRF7406GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

7.2. Size:114K international rectifier
irf7406.pdf pdf_icon

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045 Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

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