IRF740ASPBF Todos los transistores

 

IRF740ASPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF740ASPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de IRF740ASPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRF740ASPBF Datasheet (PDF)

 ..1. Size:316K  international rectifier
 irf740alpbf irf740aspbf.pdf pdf_icon

IRF740ASPBF

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2

 6.1. Size:304K  international rectifier
 irf740as-l.pdf pdf_icon

IRF740ASPBF

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2

 6.2. Size:135K  international rectifier
 irf740as.pdf pdf_icon

IRF740ASPBF

PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch

 6.3. Size:207K  vishay
 irf740as sihf740as irf740al sihf740al.pdf pdf_icon

IRF740ASPBF

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

MOSTRAR MÁS

Otros transistores... IRF7404PBF-1 , IRF7404QPBF , IRF7404PBF , IRF7406GPBF , IRF7406PBF , IRF7406PBF-1 , IRF740ALPBF , IRF740APBF , 10N60 , IRF740B , IRF740LC , IRF740LCPBF , IRF740PBF , IRF740SPBF , IRF7410GPBF , IRF7410PBF-1 , IRF7410PBF .

 

 
Back to Top

 


 
.