IRF7416PBF-1 Datasheet. Equivalente

 ..1. Size:228K  international rectifier
 irf7416pbf-1.pdf

IRF7416PbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.020 2 7 (@V = -10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 -10 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

 4.1. Size:237K  international rectifier
 irf7416pbf.pdf

PD - 95137A IRF7416PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D RDS(on) = 0.02 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 7.1. Size:269K  1
 irf7416qpbf.pdf

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

 7.2. Size:244K  international rectifier
 auirf7416q.pdf

AUTOMOTIVE GRADE AUIRF7416Q HEXFET Power MOSFET Features l Advanced Process Technology A 1 8 S D V(BR)DSS -30V l Low On-Resistance 2 7 S D l Logic Level Gate Drive 3 6 S D RDS(on) max. 0.02 l P-Channel MOSFET 4 5 G D l Dynamic dV/dT Rating ID -10A Top View l 150 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Autom

 7.3. Size:116K  international rectifier
 irf7416.pdf

PD - 9.1356D IRF7416 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

 7.4. Size:269K  international rectifier
 irf7416qpbf.pdf

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

 7.5. Size:233K  international rectifier
 irf7416gpbf.pdf

PD - 96252A IRF7416GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.02 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

 7.6. Size:879K  cn vbsemi
 irf7416trpbf.pdf

IRF7416TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6