IRL3705NS Datasheet. Equivalente

 ..1. Size:297K  international rectifier
 irl3705nspbf irl3705nlpbf.pdf

PD - 95381 IRL3705NSPbF l Logic-Level Gate Drive IRL3705NLPbF l Advanced Process Technology l Surface Mount (IRL3705NS) HEXFET Power MOSFET l Low-profile through-hole (IRL3705NL) D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.01 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier ID = 89A S

 ..2. Size:186K  international rectifier
 irl3705ns irl3705nl.pdf

PD - 91502C IRL3705NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175 C Operating Temperature RDS(on) = 0.01 Fast Switching G Fully Avalanche Rated ID = 89A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 ..3. Size:252K  inchange semiconductor
 irl3705ns.pdf

isc N-Channel MOSFET Transistor IRL3705NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 6.1. Size:481K  international rectifier
 irl3705npbf.pdf

PD - 94960 IRL3705NPbF Lead-Free www.irf.com 1 IRL3705NPbF 2 www.irf.com IRL3705NPbF www.irf.com 3 IRL3705NPbF 4 www.irf.com IRL3705NPbF www.irf.com 5 IRL3705NPbF 6 www.irf.com IRL3705NPbF Peak Diode Recovery dv/dt Test Circuit *

 6.2. Size:1024K  international rectifier
 auirl3705n.pdf

PD - 96352 AUTOMOTIVE GRADE AUIRL3705N Features HEXFET Power MOSFET Advanced Planar Technology D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.01 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID S 89A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Sp

 6.3. Size:106K  international rectifier
 irl3705n.pdf

PD - 9.1370C IRL3705N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.01 Fast Switching G Fully Avalanche Rated ID = 89A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 6.4. Size:213K  inchange semiconductor
 irl3705nl.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRL3705NL FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 6.5. Size:251K  inchange semiconductor
 irl3705n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3705N IIRL3705N FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM