PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS

PD - 91502CIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

isc N-Channel MOSFET Transistor IRL3705NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSp

PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRL3705NLFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM