IRL3803 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3803  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 230 nS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220

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IRL3803 datasheet

 ..1. Size:145K  international rectifier
irl3803.pdf pdf_icon

IRL3803

PD - 91301C IRL3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.006 175 C Operating Temperature G Fast Switching Fully Avalanche Rated ID = 140A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 ..2. Size:962K  international rectifier
irl3803pbf.pdf pdf_icon

IRL3803

PD - 94996 IRL3803PbF Lead-Free www.irf.com 1 2/10/04 IRL3803PbF 2 www.irf.com IRL3803PbF www.irf.com 3 IRL3803PbF 4 www.irf.com IRL3803PbF www.irf.com 5 IRL3803PbF 6 www.irf.com IRL3803PbF www.irf.com 7 IRL3803PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

 ..3. Size:246K  inchange semiconductor
irl3803.pdf pdf_icon

IRL3803

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3803 IIRL3803 FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RAT

 0.1. Size:273K  international rectifier
irl3803vspbf irl3803vlpbf.pdf pdf_icon

IRL3803

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec

Otros transistores... IRL3303S, IRL3402, IRL3402S, IRL3502, IRL3502S, IRL3705N, IRL3705NL, IRL3705NS, 20N50, IRL3803L, IRL3803S, IRL510, IRL510A, IRL511, IRL520, IRL520A, IRL520N