IRL3803 Datasheet and Replacement

PD - 91301CIRL3803HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.006 175C Operating TemperatureG Fast Switching Fully Avalanche RatedID = 140A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the

PD - 94996IRL3803PbF Lead-Freewww.irf.com 12/10/04IRL3803PbF2 www.irf.comIRL3803PbFwww.irf.com 3IRL3803PbF4 www.irf.comIRL3803PbFwww.irf.com 5IRL3803PbF6 www.irf.comIRL3803PbFwww.irf.com 7IRL3803PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3803IIRL3803FEATURESStatic drain-source on-resistance:RDS(on) 6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RAT

PD - 95449IRL3803VSPbFIRL3803VLPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast Switchingl Fully Avalanche Rated ID = 140ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rec

PD-95101AIRL3803SPbFIRL3803LPbF Lead-Freewww.irf.com 112/9/04IRL3803S/LPbF2 www.irf.comIRL3803S/LPbFwww.irf.com 3IRL3803S/LPbF4 www.irf.comIRL3803S/LPbFwww.irf.com 5IRL3803S/LPbF6 www.irf.comIRL3803S/LPbFwww.irf.com 7IRL3803S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)8 www.irf.comIRL3803S/LPbFTO-262 Package Outl

PD - 94735IRL3803VSIRL3803VLHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast SwitchingID = 140Al Fully Avalanche RatedSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize ad

PD - 95955IRL3803VPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Fully Avalanche RatedID = 140Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

PD - 9.1319DIRL3803S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3803S) Low-profile through-hole (IRL3803L) 175C Operating Temperature RDS(on) = 0.006 Fast SwitchingG Fully Avalanche RatedID = 140A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

PD-95101AIRL3803SPbFIRL3803LPbF Lead-Freewww.irf.com 112/9/04IRL3803S/LPbF2 www.irf.comIRL3803S/LPbFwww.irf.com 3IRL3803S/LPbF4 www.irf.comIRL3803S/LPbFwww.irf.com 5IRL3803S/LPbF6 www.irf.comIRL3803S/LPbFwww.irf.com 7IRL3803S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)8 www.irf.comIRL3803S/LPbFTO-262 Package Outl

IRL3803Swww.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSVBNC

isc N-Channel MOSFET Transistor IRL3803VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor IRL3803VIIRL3803VFEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an ext