IRF7478PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7478PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.6 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SO-8

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IRF7478PBF datasheet

 ..1. Size:128K  international rectifier
 irf7478pbf.pdf pdf_icon

IRF7478PBF

PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max (mW) ID l High frequency DC-DC converters 60V 26@VGS = 10V 4.2A l Lead-Free 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D l Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D App. Note

 0.1. Size:197K  international rectifier
 irf7478pbf-1.pdf pdf_icon

IRF7478PBF

IRF7478PbF-1 SMPS MOSFET HEXFET Power MOSFET A VDS 60 V A 1 8 S D RDS(on) max 26 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 30 (@V = 4.5V) GS 4 5 G D Qg (typical) 21 nC ID SO-8 7.0 A Top View (@T = 25 C) A Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible wit

 7.1. Size:214K  international rectifier
 irf7478qpbf.pdf pdf_icon

IRF7478PBF

PD- 96128 SMPS MOSFET IRF7478QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N Channel MOSFET 60V 26@VGS = 10V 4.2A l Surface Mount 30@VGS = 4.5V 3.5A l Available in Tape & Reel l 150 C Operating Temperature l Automotive [Q101] Qualified A A l Lead-Free 1 8 S D Description 2 7 S D Specifically designed for Autom

 7.2. Size:209K  international rectifier
 irf7478.pdf pdf_icon

IRF7478PBF

PD- 94055A IRF7478 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High frequency DC-DC converters 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D A

MOSTRAR MÁS

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