IRF7480M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7480M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 217 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 1035 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm

Encapsulados: DIRECTFET

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IRF7480M datasheet

 ..1. Size:498K  international rectifier
irf7480m.pdf pdf_icon

IRF7480M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 0.1. Size:498K  infineon
irf7480mtrpbf.pdf pdf_icon

IRF7480M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.1. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7480M

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs

 8.2. Size:141K  international rectifier
irf7488.pdf pdf_icon

IRF7480M

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and

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