IRF7480M Datasheet. Specs and Replacement

Type Designator: IRF7480M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 217 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1035 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: DIRECTFET

IRF7480M substitution

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IRF7480M datasheet

 ..1. Size:498K  international rectifier
irf7480m.pdf pdf_icon

IRF7480M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic... See More ⇒

 0.1. Size:498K  infineon
irf7480mtrpbf.pdf pdf_icon

IRF7480M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic... See More ⇒

 8.1. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7480M

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs ... See More ⇒

 8.2. Size:141K  international rectifier
irf7488.pdf pdf_icon

IRF7480M

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and... See More ⇒

Detailed specifications: IRF7473PBF-1, IRF7475PBF, IRF7476PBF, IRF7477, IRF7477PBF, IRF7478PBF, IRF7478PBF-1, IRF7478QPBF, AON7403, IRF7483M, IRF7484PBF, IRF7484Q, IRF7490PBF, IRF7492PBF, IRF7493PBF, IRF7493PBF-1, IRF7494PBF

Keywords - IRF7480M MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs